首页> 中文期刊> 《发光学报》 >基于Alq3掺杂Bphen电子传输层的有机发光二极管

基于Alq3掺杂Bphen电子传输层的有机发光二极管

         

摘要

Red phosphorescent organic light emitting diodes were fabricated using R-4B phosphorescent dye.The device structure was ITO/MoO3 (30 nm)/NPB(40 nm)/TCTA (10 nm) /CBP∶R-4B(8%) (30 nm)/electron transport layer (40 nm)/LiF(1 nm)/Al(150 nm).The electron transport layers were Alq3, Bphen∶Alq3 (x%) and Bphen, respectively.The electroluminescent properties were studied by using different electron transport layers.The results show that the brightness and the current efficiency of the device using Bphen∶Alq3 (x%) as electron transport layer is 3.5 times and 1.1-2.5 times respectively stronger than that of using Alq3 or Bphen as electron transport layer.Meanwhile, the efficiency roll-off of device became smooth.Using Bphen∶Alq3 as electron transport layer can not only reduce the hopping distance when electrons transmit between LUMO levels, but also restrain the crystallization of Bphen, and as a result, the electron conductivity and efficiency roll-off of the device are improved.%制备了结构为ITO/MoO3(30 nm)/NPB(40 nm)/TCTA(10 nm)/CBP∶R-4B(8%)(30 nm)/电子传输层(40 nm)/LiF(1 nm)/Al(150 nm)的器件,其中R-4B为红色磷光染料,电子传输层分别采用Alq3、Bphen∶Alq3(x%)和Bphen,对3种不同电子传输层器件的发光性能进行了研究.结果表明:Bphen∶Alq3(x%)作为电子传输层的器件与Alq3或Bphen作为电子传输层的器件相比,亮度提高了约3.5倍,电流效率提高了1.1~2.5倍,效率滚降变得平缓.采用Bphen∶Alq3作为电子传输层,不仅减小了电子在LUMO能级传输时的跳跃传输距离,而且在一定程度上抑制了Bphen的结晶,使器件的电子传输能力和效率滚降性能得到改善.

著录项

相似文献

  • 中文文献
  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号