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Efficient small molecular organic light emitting diode with graphene cathode covered by a Sm layer with nano-hollows and n-doped by Bphen:Cs2CO3 in the hollows

机译：高效的小分子有机发光二极管，带石墨烯阴极，由纳米空洞的SM层覆盖，并通过Bphen掺杂N-掺杂：CS2CO3在空洞中

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摘要

Graphene is a favorable candidate for electrodes of organic light emitting diodes (OLEDs). Graphene has quite a high work function of similar to 4.5 eV, and has been extensively studied when used as anodes of OLEDs. In order to use graphene as a cathode, the electron injection barrier between the graphene cathode and the electron transport layer has to be low enough. Using 4,7-diphenyl-1,10-phenanthroline (Bphen):Cs2CO3 to n-dope graphene is a very good method, but the electron injection barrier between the n-doped graphene and Bphen:Cs2CO3 is still too high to be similar to 1.0 eV. In this work, in order to further reduce the electron injection barrier, a novel method is suggested. On the graphene cathode, a Sm layer with a lot of nano-hollows, and subsequently a layer of Bphen:Cs2CO3, are deposited. The Bphen:Cs2CO3 can n-dope graphene in the nano-hollows, and the Fermi level of the graphene rises. The nano Sm layer is very easily oxidized. Oxygen adsorbed on the surface of graphene may react with Sm to form an O--Sm+ dipole layer. On the areas of the Sm oxide dipole layer without nano-hollows, the electron injection barrier can be further lowered by the dipole layer. Electrons tend to mainly inject through the lower electron barrier where the dipole layer exists. Based on this idea, an effective inverted small molecular OLED with the structure of graphene/1 nm Sm layer with a lot of nano-hollows/Bphen: Cs2CO3/ Alq(3):C545T/NPB/MoO3/Al is presented. The maximum current efficiency and maximum power efficiency of the OLED with a 1 nm Sm layer are about two and three times of those of the reference OLED without any Sm layer, respectively.
机译：石墨烯是有机发光二极管电极（OLED）的有利候选者。石墨烯具有相当高的功函数，类似于4.5 eV，用作OLED的阳极时已被广泛研究。为了使用石墨烯作为阴极，石墨烯阴极与电子传输层之间的电子注入屏障必须足够低。使用4,7-二苯基-1,10-菲素（Bphen）：Cs2CO3至N-掺杂石墨烯是一种非常好的方法，但是N-掺杂石墨烯和Bphen之间的电子注入屏障：CS2CO3仍然太高，以相似到1.0 ev。在这项工作中，为了进一步降低电子注入屏障，提出了一种新方法。在石墨烯阴极上，具有大量纳米空腔的SM层，随后沉积了一层Bphen：Cs2CO3。 BPHEN：CS2CO3可以在纳米中空中的N-掺杂石墨烯，并且石墨烯的费米水平升高。纳米SM层非常容易氧化。吸附在石墨烯表面上的氧可以与SM反应以形成O - Sm +偶极层。在没有纳米中空的SM氧化物偶极层的区域上，电子注入屏障可以通过偶极层进一步降低。电子倾向于主要通过偶极层存在的下电子屏障注射。基于该思想，具有大量纳米空腔/ Bphen的石墨烯/ 1nm SM层结构的有效倒小分子OLED：CS2CO3 / ALQ（3）：C545T / NPB / MOO3 / Al。用1nm SM层的OLED的最大电流效率和最大功率效率分别是参考OLED的大约两个和三次，没有任何SM层。

著录项

  • 来源
    《Nanotechnology》 |2017年第10期|共7页
  • 作者

    Yao Li; Li Lei; Qin Laixiang; Ma Yaoguang; Wang Wei; Meng Hu; Jin Weifeng; Wang Yilun; Xu Wanjin; Ran Guangzhao; You Liping; Qin Guogang;

  • 作者单位

    Peking Univ Sch Phys State Key Lab Microscop Phys Beijing 100871 Peoples R China;

    Peking Univ Sch Phys State Key Lab Microscop Phys Beijing 100871 Peoples R China;

    Peking Univ Sch Phys State Key Lab Microscop Phys Beijing 100871 Peoples R China;

    Peking Univ Sch Phys State Key Lab Microscop Phys Beijing 100871 Peoples R China;

    Peking Univ Sch Phys State Key Lab Microscop Phys Beijing 100871 Peoples R China;

    Peking Univ Sch Phys State Key Lab Microscop Phys Beijing 100871 Peoples R China;

    Peking Univ Sch Phys State Key Lab Microscop Phys Beijing 100871 Peoples R China;

    Peking Univ Sch Phys State Key Lab Microscop Phys Beijing 100871 Peoples R China;

    Peking Univ Sch Phys State Key Lab Microscop Phys Beijing 100871 Peoples R China;

    Peking Univ Sch Phys State Key Lab Microscop Phys Beijing 100871 Peoples R China;

    Peking Univ Sch Phys Electron Microscopy Lab Beijing 100871 Peoples R China;

    Peking Univ Sch Phys State Key Lab Microscop Phys Beijing 100871 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    organic light emitting diodes; graphene cathode; Sm; Bphen:Cs2CO3; dipole layer with nano-hollows;

    机译：有机发光二极管;石墨烯阴极;SM;BPHEN：CS2CO3;偶极层与纳米空洞;

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