In2O3 thin-film transistors (TFTs) with different channel thicknesses were fabricated on SiO2/Sisubstrates by DC magnetron sputtering at room temperature.The effects of the channel thickness on the electrical properties of In2O3 TFTs with bottom-gate configuration were investigated.The performance of devices was found to be thickness dependent.The In2O3 TFT with the optimized channel thickness exhibites enhancement mode characteristics,the threshold voltage is 2.5 V,the current on-off ratio is 106,and the field-effect mobility is 6.2 cm2 · V-1 · s-1%在室温下采用直流磁控溅射以SiO2/Si为衬底制备了不同沟道层厚度的底栅式In2O3薄膜晶体管,讨论了沟道层厚度对底栅In2O3薄膜晶体管的电学性能的影响.实验结果表明:器件的特性与沟道层厚度有关,最优沟道层厚度的In2O3薄膜晶体管为增强型,其阈值电压为2.5 V,开关电流比约为106,场效应迁移率为6.2 cm2·V-1·s-1.
展开▼
