采用磁控溅射的方法在p-GaN上制备了GZO透明导电薄膜,通过在p-GaN和GZO界面之间插入AgOx薄层来改善LED器件的接触性能.研究结果表明:氮气退火后,采用界面插入层的AgO/GZO薄膜电阻率为5.8×10-4Ω·cm,在可见光的透过率超过80％.AgOx界面插入层有效地降低了GZO与p-GaN之间的接触势垒,表现出良好的欧姆接触特性,同时使LED器件的光电性能获得了显著的提高.在50 mA的注入电流下,相比于常规的GZO电极LED器件,AgOx/GZO电极LED器件的正向电压由9.68 V降至6.92 V,而发光强度提高了13.5％.%GZO transparent conductive layers were deposited on p-GaN surface by magnetron sputtering. AgOx thin films were inserted between p-GaN and GZO to improve the performance of LED devices. The AgOx/GZO thin film exhibited low resistivity (5. 8×10-4Ω o cm) and high transmit-tance (above 80% in visible range) after nitrogen annealing. The AgOx interface insertion layer could effectively reduce the contact barrier, leading to good Ohmic contact characteristics of GZO/ p-GaN and improved photoelectric performance of LEDs. With 50 mA injection current, the forward voltage reduced from 9. 68 V to 6. 92 V and the luminous intensity increased by 13.5% compared with conventional GZO electrode LEDs.
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