Si-based optoelectronic devices with high performance were almost based on the relaxed SiGe buffer layers. In this paper, an over 60% strain relaxed, Si_(0.75)Ge_(0.25) layer formed by drily oxidizing the Si_(0.9)Ge_(0.1)/Si MQW on Si-sub at 1050℃ was prepared. By the comparison of the samples for various oxidation times, the relaxation & composition of the SiGe layers during the oxidation processes were analyzed.%SiGe弛豫衬底是制备高性能Si基SiGe光电子器件的基础平台.本文通过1050℃不同时间氧化SiGe/si MQW材料,分析氧化过程中Ge组分、弛豫度的变化趋势,制备位错密度低、表面平整、弛豫度超过60%的Si基Si_(0.75)Ge_(0.25)缓冲层.
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