Terbium-doped Zn2SiO4 films were successfully prepared on Si wafers by a simple sol-gel dip-coating and solid-phase reaction method of ZnO and SiO2. X-ray diffraction (XRD) and UV-Vis absorption results revealed that films processed below 850℃ were ZnO in wurzite structure, and films processed above 850℃ were Zn2SiO4 in wellimite structure. Photoluminescence measurements of the Tb-doped Zn2SiO4 films showed two strong emission bands at 490 and 545nm. The photoluminescence lifetime was 4.6ms.
展开▼
