High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center;
Institute of Microelectronics of Chinese Academy of Sciences;
Beijing 100029;
China;
University of Chinese Academy of Sciences;
Beijing 100049;
China;
Zhuzhou CRRC Times Electric Co.;
Ltd;
Zhuzhou 412001;
China;
Al-implanted; 4H-SiC; activation; annealing; extended; defects; carbon; vacancies;