首页> 中文期刊> 《中国物理:英文版》 >Oxide magnetic semiconductors: Materials, properties, and devices

Oxide magnetic semiconductors: Materials, properties, and devices

         

摘要

We give a brief introduction to the oxide (ZnO, TiO2 , In2O3 , SnO2 , etc.)-based magnetic semiconductors from fundamental material aspects through fascinating magnetic, transport, and optical properties, particularly at room temperature, to promising device applications. The origin of the observed ferromagnetism is also discussed, with a special focus on first-principles investigations of the exchange interactions between transition metal dopants in oxide-based magnetic semiconductors.

著录项

相似文献

  • 中文文献
  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号