This paper reports that indium tin oxide (ITO) crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase,microstructure,infrared emissivity ε and powder resistivity of indium tin oxides by means of x-ray diffraction,Fourier transform infrared,and transmission electron microscope. The optimum sintering temperature of 1350 C and Sn doping content 6～8wt% are determined. The application of ITO in the military camouflage field is proposed.
展开▼
机译：Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/silicon oxide/silicon junction solar cells
机译：利用扫描穿隧显微镜探讨在硒化铟上未氧化表面和氧化表面之介面接合处的电子特性 =Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface Junction
机译：Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor
