The mask-free SF_6/O_2 plasma etching technique is used to produce surface texturization of mc-silicon solar cells for efficient light trapping in this work.The SEM images and mc-silicon etching rate show the influence of plasma power,SF_6/O_2 Bow ratios and etching time on textured surface.With the acidic-texturing samples as a reference,the reflection and IQE spectra are obtained under different experimental conditions.The IQE spectrum measurement shows an evident increase in the visible and infrared responses.By using the optimized plasma power,SF_6/O_2 flow ratios and etching time,the optimal efEciency of 15.7%on 50×50 mm^2 reactive ion etching textured mc-silicon silicon solar cells is achieved,mostly due to the improvement in the short-circuit current density.The corresponding open-circuit voltage,short-circuit current density and fill factor are 611 mV,33.6mA/cm^2,76.5%,respectively.It is believed that such a low-cost and high-performance texturization process is promising for large-scale industrial silicon solar cell manufacturing.
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