GaN thin films are grown on Si-terminated (0001) 6H-SiC substrates pre-treated with SiH_(4) in a metal organic chemical vapor deposition system.The influence of the SiH_(4) pre-treatment conditions on the SiC surface is carefully investigated.It is found that SiH_(4) could react with the SiC surface oxide,which will change the surface termination.Moreover,our experiments demonstrate that SiH_(4) pre-treatment can distinctly influence the AlGaN nucleation layer and the basic characteristics of GaN.
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