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Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

机译：HVPE生长的GaN晶体中的应力对MOCVD-GaN / 6H-SiC衬底的影响

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摘要

GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress has a great influence on the growth of the epitaxial films. An atomic level model is used to explain these phenomena during crystal growth. It is found that atomic mobility is retarded by compressive stress and enhanced by tensile stress.

机译：在初始生长时，具有低V / III比20的MOCVD-GaN / 6H-SiC（MGS）衬底上成功生长了无裂纹的GaN晶体。在初始生长时具有80的高V / III比，获得了不透明的GaN多晶。结构分析和光学表征表明，应力对外延膜的生长有很大影响。原子级模型用于解释晶体生长过程中的这些现象。已经发现，原子迁移率受压缩应力的阻碍而受拉伸应力的影响。

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期刊名称 Scientific Reports
作者
Lei Zhang; Jiaoxian Yu; Xiaopeng Hao; Yongzhong Wu; Yuanbin Dai; Yongliang Shao; Haodong Zhang; Yuan Tian;
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年(卷),期 -1(4),-1
年度 -1
页码 4179
总页数 6
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1. Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate [J] . Lei Zhang, Jiaoxian Yu, Xiaopeng Hao, Scientific reports. . 2014,第期

机译：HVPE在MOCVD-GaN / 6H-SiC衬底上生长的GaN晶体中应力的影响
2. Comparison of the strain of GaN films grown on MOCVD-GaN/Al_2O_3 and MOCVD-GaN/SiC samples by HVPE growth [J] . Lei Zhang, Yongliang Shao, Xiaopeng Hao, Journal of Crystal Growth . 2011,第1期

机译：通过HVPE生长比较在MOCVD-GaN / Al_2O_3和MOCVD-GaN / SiC样品上生长的GaN薄膜的应变
3. HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties [J] . Tomasz Sochacki, Zachary Bryan, Mikolaj Amilusik, Journal of Crystal Growth . 2014,第maya15期

机译：在MOCVD-GaN /蓝宝石模板和氨热GaN种子上生长的HVPE-GaN：结构，光学和电学性质的比较
4. AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, 6H-SiC, and HVPE-GaN templates [C] . N G Weimann, M J Manfra, J W P Hsu, International Symposium on Compound Semiconductors . 2003

机译：AlGaN / GaN HEMT通过SAPPHIRE，6H-SIC和HVPE-GAN模板上的分子束外延生长
5. Determination via luminescence spectroscopy and x-ray diffraction of the strain and composition of GaN and Al(x)Ga(1-x)N thin films grown on 6H-SiC(0001) substrates. [D] . Perry, William George. 1997

机译：通过发光光谱和X射线衍射测定在6H-SiC（0001）衬底上生长的GaN和Al（x）Ga（1-x）N薄膜的应变和组成。
6. The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE [O] . Moonsang Lee, Dmitry Mikulik, Mino Yang, -1

机译：通过HVPE从Si衬底上生长的独立式GaN晶体中的应力研究
7. The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE [O] . Moonsang Lee, Dmitry Mikulik, Mino Yang, 2017

机译：用HVPE从Si底物生长的独立GaN晶体压力调查
8. Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition [R] . Moutinho, H. R., Jiang, C. S., Nelson, B., 2003

机译：衬底温度和氢稀释比对热线化学气相沉积法生长纳米硅薄膜性能的影响

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

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