首页> 中文期刊> 《中国物理快报:英文版》 >Enhancement of Band Edge Emission from ZnS/Zn(OH)_(2) Quantum Dots

Enhancement of Band Edge Emission from ZnS/Zn(OH)_(2) Quantum Dots

         

摘要

ZnS and Zn(OH)_(2) capped ZnS semiconductor quantum dots(QDs)have been synthesized by the colloidal chemical method using inorganic reagents.Transmission electron microscopy and electron diffraction results showed that the monodispersed ZnS QDs have 1 to 5 nm in diameter and the wurtzite structure.The polarities of the precursors and surfactant solvents have shown strong effects on the properties of the photoluminescence for ZnS QDs.For ZnS QDs capped with a wider band gap Zn(OH)_(2) shell,the surface trap states were passivated and hence the band-edge emissions have been enhanced.

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