Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate

王琦; 余俊驰; 陶涛; 刘斌; 智婷; 岑旭; 谢自力; 修向前; 周玉刚; 郑有炓; 张荣

首页> 中文期刊> 《中国物理快报：英文版》 >Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate

开具论文收录证明 >>

期刊封面封底目录下载 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

GaN-based micro light emitting diodes(micro-LEDs) on silicon(Si)substrates with 40μm in diameter are developed utilizing standard photolithography and inductively coupled plasma etching techniques.From currentvoltage curves,the relatively low turn-on voltage of 2.8 V and low reverse leakage current in the order of 10-8 A/cm2 indicate good electrical characteristics.As the injection current increases,the electroluminescence emission wavelength hardly shifts at around 433 nm, and the relative external quantum efficiency slightly decays,because the impact of quantum-confined Stark effect is not serious in violet-blue micro-LEDs.Since GaN-LEDs are cost effective on large-area Si and suitable for substrate transfer or vertical device structures,the fabricated micro-LEDs on Si should have promising applications in the fields of high-resolution display and optical communication.

著录项

来源
《中国物理快报：英文版》 |2019年第8期|94-97|共4页
作者
王琦; 余俊驰; 陶涛; 刘斌; 智婷; 岑旭; 谢自力; 修向前; 周玉刚; 郑有炓; 张荣;
展开▼
作者单位

Key Laboratory of Advanced Photonic and Electronic Materials;

School of Electronic Science and Engineering;

Nanjing University;

Nanjing210093;

Nanjing National Laboratory of Microstructures;

Nanjing University;

Nanjing210093;

College of Electronic and Optical Engineering&College of Microelectronics;

Nanjing University of Posts andTelecommunications;

Nanjing210093;

展开▼
原文格式 PDF
正文语种 chi
中图分类 TN312.8;
关键词
Fabrication; Characterization; Silicon;

相似文献

中文文献
外文文献
专利

1. Fabrication and Characterization of a GaN-Based 320×256 Micro-LED Array [J] . 莫晓帆 ,徐尉宗 ,陆海 . 中国物理快报：英文版 . 2017,第11期
2. Fabrication and Characterization of PZN-4.5PT Inorganic Perovskites Nanoparticles Thin Films Deposited on P-Type Silicon Substrate [J] . Rémi Ndioukane ,Moussa Touré ,Diouma Kobor . 现代物理（英文） . 2018,第2期
3. Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate [J] . 郭娇欣 ,丁杰 ,莫春兰 . 中国物理：英文版 . 2020,第4期
4. Fabrication and Optical Characterization of GaN-Based Nanopillar Light Emitting Diodes [J] . 朱继红 ,张书明 ,孙苋 . 中国物理快报：英文版 . 2008,第9期
5. STABLE HIGH EFFICIENCY REAR BORON EMITTER SOLAR CELLS ON N-TYPE SINGLE CRYSTALLINE SILICON SUBSTRATES [C] . . 第八届全国光伏会议暨中日光伏论坛 . 2004
6. Fabrication of a Nonwoven Polishing Pad for the Production a Silicon Wafer Using Polyethylene Terephthalate,Polypropylene and Polyvinyl Alcohol Fibers [A] . Sizo Ncube . 2014

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate

摘要

著录项

相似文献

相关主题

期刊订阅