Two-inch Ga_2O_3 films with(ˉ201)-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga_2O_3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V.
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机译：Effects of buffer layer on formation of domain boundaries in epilayer during film growth of GaN by low-pressure metal-organic vapor phase epitaxy on sapphire substrates
机译：Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire
