The current-voltage (I- V) characteristics of In/p-Si Schottky barrier diodes have been determined in the temper-ature range 100-300 K and have been interpreted based on the assumption of a Gaussian distribution of barrierheights due to barrier height inhomogeneities that prevail at the metal-semiconductor interface. The evaluationof the experimental I-V data reveals a decrease of zero-bias barrier height but an increase of ideality factor nwith decreasing temperature. The inhomogeneities are considered to have Gaussian distribution with a meanzero-bias barrier height of 0.630 eV and standard deviation of O. 083 V at zero bias. Furthermore, the mean barrierheight and the Richardson constant values were obtained to be 0.617eV and 20.71 A K^-2 cm^-2, respectively, bymeans of the modified Richardson plot, ln(I0/T^2) - (q^2δ^20/2k^2T^2) versus 1000/T.
展开▼
机译：Temperature-dependent current transport in quasi-vertical Pt/AlN/Al0.6Ga0.4N heterostructure Schottky barrier diodes with significant improved forward characteristic
机译：Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal
