Power Dependence of the Recombination Processes in the In_(x)Ga_(1-x)As/GaAs Single Quantum Well

QIAN Shixiong; WU Jianyao; YUAN Shu; LI Yufen; Thorwald G.Andersson; CHEN Zonggui; PENG Wenji; SHE Weilong; YU Zhenxin

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Power Dependence of the Recombination Processes in the In_(x)Ga_(1-x)As/GaAs Single Quantum Well

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We have measured the power dependence of the photoluminesence spectra from a set of strained In_(x)Ga_(1-x)As/GaAs single quantum wells.The result shows that the excitation power has important effect on the carrier recombination processes.When the power increases from 0.5 to 14mW,the photoluminescence from the barrier becomes more intense than that from the well and the trapping efficiency decreases.At high excitation level,the ratio of the radiative recombination rate to the nonradiative recombination rate of the barrier increases ten times than that at lower excitation level,while it only doubles for the well.

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《中国物理快报：英文版》 |1991年第8期|428-431|共4页
作者
QIAN Shixiong; WU Jianyao; YUAN Shu; LI Yufen; Thorwald G.Andersson; CHEN Zonggui; PENG Wenji; SHE Weilong; YU Zhenxin;
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作者单位

Department of Physics;

Fudan University;

Shanghai 200433;

Department of Physics;

Chalmers University of Technology;

Goteborg;

Sweden;

Institute of Semiconductor;

Academia Sinica;

Beijing 100083;

Institute of Laser Spectroscopy;

Zhongshan University;

Guangzhou 510275;

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原文格式 PDF
正文语种 chi
中图分类半导体技术;
关键词
As/GaAs; excitation; barrier;

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1. TIME-RESOLVED PHOTOLUMINESCENCE FROM In_(x)Ga_(1-x)As/GaAs SINGLE QUANTUM WELL [J] . 钱士雄 ,袁述 ,有郁芬 . 中国物理快报：英文版 . 1989,第12期
2. The nonlinear optical properties of a magneto-exciton in a strained Ga_(0.2)In_(0.8)As/GaAs quantum dot [J] . N.R.Senthil Kumar ,A.John Peter ,Chang Kyoo Yoo . 中国物理：英文版 . 2013,第10期
3. A Narrow Photoluminescence Linewidth of 19.2 meV at 1.35μm from In_(0.5)Ga_(0.5)As/GaAs Quantum Island Structure Grown by Molecular Beam Epitaxy [J] . 王晓东 ,牛智川 ,封松林 . 中国物理快报：英文版 . 2001,第4期
4. PHOTOLUMINESCENCE STUDIES OF In_(0.25)Ga_(0.75)As-GaAs STRAINED QUANTUM WELLS UNDER HIGH PRESSURE [J] . 王莉君 ,候宏启 ,周均铭 . 中国物理快报：英文版 . 1989,第2期
5. In_(0.15)Ga_(0.85)As/GaAs和GaAs/Al_(0.3)Ga_(0.7)As量子阱的静压下光致发光的对照研究 [J] . 李国华 ,郑宝真 ,韩和相 . 半导体学报 . 1990,第9期

Power Dependence of the Recombination Processes in the In_(x)Ga_(1-x)As/GaAs Single Quantum Well

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