Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs

包斯琴高娃; 祝杰杰; 马晓华; 侯斌; 杨凌; 陈丽香; 朱青; 郝跃

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Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs

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We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transistors(HEMTs).A 200W NH3/N2 remote plasma causes little degeneration of carrier mobility and an increase in electron density due to surface alteration,which results in a decrease in sheet resistance and an increase in output current by 20–30%.Improved current slump,suppressed gate leakage current,and improved Schottky contact properties are also achieved by using low-damage nitride-based plasma treatment.It is found that NH3/N2 remote plasma treatment is a promising technique for GaN-based HEMTs to modulate the surface conditions and channel properties.

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《中国物理快报：英文版》 |2020年第2期|51-54|共4页
作者
包斯琴高娃; 祝杰杰; 马晓华; 侯斌; 杨凌; 陈丽香; 朱青; 郝跃;
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作者单位

School of Advanced Materials and Nanotechnology;

Xidian University;

Xi’an 710071;

Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices;

School of Microelectronics;

Xidian University;

Xi’an 710071;

School of Science;

Inner Mongolia University of Technology;

Hohhot 010051;

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原文格式 PDF
正文语种 chi
中图分类场效应器件;
关键词
AlGaN/GaN; HEMTs; treatment;

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3. Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics [J] . ZHANG Guang-Chen ,FENG Shi-Wei ,HU Pei-Feng . 中国物理快报：英文版 . 2011,第1期
4. Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer:Material Growth and Device Fabrication [J] . 巩稼民 ,王权 ,闫俊达 . 中国物理快报：英文版 . 2016,第11期
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Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs

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