Tungsten-doped indium oxide thin films(In2O3:W,IWO)with good optical and electrical properties were prepared on glass substrates by radio frequency(RF)reactive magnetron sputtering method.Tin-doped indium oxide thin films(In2O3:Sn,ITO)were purchased industrial production.All these films were irradiated by gamma rays with different amount of flux in a ground-based simulation system close to the environment of deep space.Changes in characteristics including microstructure,surface morphology,chemical states,optical and electrical properties were compared between IWO and ITO films after irradiation.The variations of defects in films before and after irradiation were measured by positron annihilation technique(PAT).As a result,oxygen vacancy defects were emerged in ITO and IWO films after irradiation especially in the surfaces and interfaces.It is indicated that gamma rays have influence on transparent conductive oxide thin films by knocking chemical bonds with lower binding energy and producing oxygen vacancies.Recombination between different elements and oxygen may be selective while chemical states keep constant.Both ITO and IWO films possess suitable anti-gamma rays irradiation properties.And IWO films are more appropriate as anti-gamma rays protective coatings in deep space exploration than ITO films.%利用射频磁控溅射法制备出具有良好光电性能的In2O3:W(IWO)薄膜,与购置的In2O3:Sn(ITO)薄膜一起,在伽马射线地面加速模拟试验设备中进行辐照试验.对辐照前后两种薄膜样品的微观结构、表面形貌、光电性能和元素价态进行对比分析,并用正电子湮没方法研究辐照前后的缺陷情况.结果表明,伽马射线辐照可引起ITO及IWO薄膜样品中氧空位缺陷的少量增加,且缺陷主要产生于薄膜表层及薄膜与基底界面结合处.高能伽马光子作用于透明导电氧化物薄膜,主要通过破坏其内部结合能较低的化学键,并实现薄膜系统中元素之间的选择性重组.ITO与IWO具有良好的抗伽马辐照性能,IWO相比ITO更适合于抗伽马辐照相关应用.
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