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首页> 外文期刊>Chinese journal of aeronautics >Effects of Atomic Oxygen Irradiation on Transparent Conductive Oxide Thin Films
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Effects of Atomic Oxygen Irradiation on Transparent Conductive Oxide Thin Films

机译：原子氧辐照对透明导电氧化物薄膜的影响

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摘要

Transparent conductive oxide (TCO) thin film is a kind of functional material which has potential applications in solar cells and atomic oxygen (AO) resisting systems in spacecrafts. Of TCO, ZnO: Al (ZAO) and In_2O_3:Sn (ITO) thin films have been widely used and investigated. In this study, ZAO and ITO thin films were irradiated by AO with different amounts of fluence. The as-deposited samples and irradiated ones were characterized by X-ray diffraction (XRD)', scanning electron microscopy (SEM) and Hall-effect measurement to investigate the dependence of the structure, morphology and electrical properties of ZAO or ITO on the amount of fluence of AO irradiation. It is noticed that AO has erosion effects on the surface of ZAO without evident influences upon its structure and conductive properties. Moreover, as the amount of AO fluence rises, the carrier concentration of ITO decreases causing the resistivity to increase by at most 21.7%.
机译：透明导电氧化物（TCO）薄膜是一种功能材料，在太阳能电池和航天器的抗原子氧（AO）系统中具有潜在的应用前景。在TCO中，ZnO：Al（ZAO）和In_2O_3：Sn（ITO）薄膜已被广泛使用和研究。在这项研究中，ZAO和ITO薄膜被AO以不同的通量辐照。通过X射线衍射（XRD）'，扫描电子显微镜（SEM）和霍尔效应测量对沉积后的样品和辐照后的样品进行表征，以研究ZAO或ITO的结构，形态和电学性质对添加量的依赖性AO辐照度的影响。注意到AO对ZAO的表面具有腐蚀作用，而对其结构和导电性能没有明显的影响。而且，随着AO注量的增加，ITO的载流子浓度降低，导致电阻率最多增加21.7％。

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