分析了新型光电器件在常规空间辐射环境下,电子器件所产生的一系列位移型损伤及对应成因.经多次对比实验发现,其位移损伤和器件失效主要由非电离能损(NIEL)所诱发.其根本损耗来源为:在低能空间状态下,库仑间的相互作用力将凸显,并逐渐占据主导地位.而当前主要采用的散射微分截面法,如Mott-Rutherford型散射法,均无法有效屏蔽核外电子间存在的库仑作用力影响,从而导致大量非电离能损产生.由此,文中结合非电离能损特性及成因,在解析算法基础上结合Monte-Carlo推衍方法,以SRIM程序模拟并推算出较精确的低能质子在半导体材料(以Si、GaAS为例)中的NIEL数值量级,同时参照薄靶近似思想改良实验.实验数据规律表明,能量总值为1 keV的低能质子材料中NIEL评测数值量级大约为GaAs质子材料的1/5、Summers数值量级的1/3,这一结果将为航天材质设计和改良提供重要的参考.%In this paper, we mainly study and analyze a series of displacement damage caused by a new type of optoelectronic devices in the conventional space radiation environment.After many experiments, it is found that the displacement damage and failure of the device are mainly caused by non ionization energy loss (NIEL).The basic loss is: in the low energy space state, the interaction force between the Coulomb will be prominent, and gradually occupy the leading position.At present, the main use of the scattering differential cross section method, such as the Mott-Rutherford type scattering method, can not effectively shield the influence of the Coulomb force, which leads to a large amount of non ionization energy loss.Therefore, the author combines the characteristics and formation of non ionizing energy loss, based on analytic algorithm combining Monte-Carlo derivation method, using SRIM simulation program to calculate accurately the low energy proton in semiconductor materials (Si, GaAs) NIEL orders of magnitude in at the same time, according to a thin target in thought experiment improvement.Experimental results show that a large amount of data for low energy proton energy law: gross material 1 keV in the evaluation of NIEL orders of magnitude is about GaAs, the 1/5 Summers proton material orders of magnitude 1/3, the results will provide important reference for design and improvement of aerospace materials.
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