文章阐述了硅功率VDMOS器件的基本原理和器件结构，也展现了作为电力电子器件其广阔的应用领域，提出了功率VDMOS器件对硅外延材料的要求和发展方向。依据功率器件对外延片的要求，通过优化外延工艺程序和优化外延工艺参数，消除或减弱了自掺杂对电阻率均匀性的影响，消除了过渡区对厚度均匀性的影响，也较好地控制了外延层中的结构缺陷和表面形貌，研制出了符合功率器件的大尺寸外延材料。同时，详细研究了硅外延材料参数与VDMOS功率器件电性能参数之间的对应关系，为功率器件的发展和普及奠定了基础。%This topic is about the basic theory and composition of power VDMOS, covering the wide application for power electronic devices, the request for silicon epitaxy material and the development direction in the future. According to the demands for the epitaxial wafer, by optimizing the epitaxial process and parameter, we have eliminated or weakened the effect by self-dopant on resistivity uniformity, dispelled the impact by transition zone on thickness uniformity, well removed the configuration defect and, finally produced the demanded epitaxy material with large size. Meanwhile, our serious study, which is on the relationship between parameter of silicon epitaxy material and the electronic property parameter of VDMOS device, has laid a solid foundation for the development and popularity of power devices.
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