Ni80 Fezo thin films (thickness of 100 nm) were prepared by vacuum electron-beam deposition method, and effects of magnetic field annealing temperature on the magnetic domain structure of Ni80 Fe20 thin films were investigated. The magnetic hysteresis loops of Ni80 Fe20 thin films were measured by vibrating sample magnetometer (VSM), Surface morphology and magnetic domains structure were observed by magnetic force microscope (MFM). The experiment results show that the magnetic domain structure is obvious stripe-shaped domains, and the maximum width value of magnetic domains is about 860 nm; with annealing temperatures increase, the domain is oriented along the vertical direction to the thin films surface. Small transverse domain structure is formed along domain walls of the main domain when the annealing temperature is 600 ℃.%利用电子束真空蒸发方法制备了厚度100 nm的Ni80Fe20薄膜,研究了磁场退火温度对薄膜磁畴结构的影响.利用振动样品磁强计测量了磁滞回线,利用磁力显微镜观察了薄膜的表面形貌和磁畴结构.结果表明:磁畴结构为明显的条状畴,磁畴宽度最大值约为860 nm;随着磁场退火温度的升高,磁畴取向趋于沿垂直膜面方向,退火温度为600℃时,沿着主畴的畴壁形成了细小的横向细畴结构.
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