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Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

         

摘要

The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propaga-tion,and core-propagation,the process of graphene growth on silicon can be identified. This process produces atomi-cally flat monolayer or bilayer graphene domains,concave bilayer graphene domains,and bulging few-layer graphene domains.This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates.

著录项

  • 来源
    《安徽地质》 |2018年第2期|10-18|共9页
  • 作者单位

    Shanghai Synchrotron Radiation Facility,Shanghai Institute of Applied Physics,Chinese Academy of Sciences, Shanghai 201204,People's Republic of China;

    Department of Electronic Engineering,Tsinghua University, Beijing 100084,People's Republic of China;

    Shanghai Synchrotron Radiation Facility,Shanghai Institute of Applied Physics,Chinese Academy of Sciences, Shanghai 201204,People's Republic of China;

    Shanghai Synchrotron Radiation Facility,Shanghai Institute of Applied Physics,Chinese Academy of Sciences, Shanghai 201204,People's Republic of China;

    Shanghai Synchrotron Radiation Facility,Shanghai Institute of Applied Physics,Chinese Academy of Sciences, Shanghai 201204,People's Republic of China;

    University of Chinese Academy of Sciences,Beijing 100049, People's Republic of China;

    Shanghai Synchrotron Radiation Facility,Shanghai Institute of Applied Physics,Chinese Academy of Sciences, Shanghai 201204,People's Republic of China;

    Shanghai Synchrotron Radiation Facility,Shanghai Institute of Applied Physics,Chinese Academy of Sciences, Shanghai 201204,People's Republic of China;

    Shanghai Synchrotron Radiation Facility,Shanghai Institute of Applied Physics,Chinese Academy of Sciences, Shanghai 201204,People's Republic of China;

    Shanghai Synchrotron Radiation Facility,Shanghai Institute of Applied Physics,Chinese Academy of Sciences, Shanghai 201204,People's Republic of China;

    Shanghai Synchrotron Radiation Facility,Shanghai Institute of Applied Physics,Chinese Academy of Sciences, Shanghai 201204,People's Republic of China;

    Shanghai Synchrotron Radiation Facility,Shanghai Institute of Applied Physics,Chinese Academy of Sciences, Shanghai 201204,People's Republic of China;

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