采用电子束蒸发的方式,制备了有氧化硅内保护层和没有氧化硅内保护层的1 064 nm高透过、532 nm高反射的HfO2/SiO2双色膜,测量了它们的光学性能以及在基频和倍频激光辐照下的抗损伤性能.结果表明:氧化硅内保护层提高了双色膜在基频光辐照下的损伤阈值,对双色膜在倍频光辐照下的损伤阈值无明显影响.通过观察薄膜的损伤形貌,分析破斑的深度信息结合驻波场分布,对两类双色膜在基频光和倍频光下的损伤机制做了初步探讨.分析表明:氧化硅内保护层提高了膜基界面的抗损伤性能,从而提高了双色膜在基频光下的损伤阈值.%1 064 nm antireflection/532 nm high-reflection bichromatic coatings with and without barrier layer were fabricated on the UBK7 substrate using electron beam evaporation technique.The optical property and laser-induced damage threshold (LIDT) of the coatings were investigated, respectively.Compared with the coatings without barrier layer, the 1 064 nm LIDT of the bichromatic coatings with SiO2 barrier layer is 49.6％ higher.By analyzing the morphology and depth information of laser-induced damage spots, and the standing wave electric field distribution of the film stacks, the mechanisms of 1 064 nm and 532 nm laser-induced damages of the bichromatic coatings were discussed.The results show that SiO2 barrier layer strengthens the coatings-substrate interface, and therefore the 1 064 nm LIDT of the bichromatic coatings with barrier layer is improved.
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