为了评估静态随机访问存储器(SRAM)型现场可编程门阵列(FPGA)器件的单粒子效应,寻求单粒子翻转敏感部位,以XCV300PQ240为实验样品,利用重离子辐照装置详细测试了该器件的静态翻转截面,并根据配置存储单元用途的不同,对翻转数据进行了分类.结果表明:SRAM型FPGA的内部存储单元对单粒子翻转效应十分敏感;配置存储器翻转主要由查找表(LUT)及互连线资控制位造成,这两者的翻转占总翻转数的97.46%;配置存储器中各类资源的单粒子翻转(SEU)敏感性并不一致,输入输出端口(IOB)控制位和LUT的单粒子翻转的敏感性远高于其它几类资源,但LUT在配置存储器中占有很大比例,在加固时应予以重点考虑.%In order to evaluate single event upsets(SEUs) in SRAM-based FPGAs and to find the sensitive resource in configuration memory, a heavy ions irradiation experiment was carried out on a Xilinx FPGAs device XCV300PQ240.The experiment was conducted to gain the static SEU cross section and classify the SEUs in configurations memory according to different resource uses.The results demonstrate that the inter-memory of SRAM-based FPGAs is extremely sensitive to heavy-ion-induced SEUs.The LUT and routing resources are the main source of SEUs in the configuration memory, which covers more than 97.45％ of the total upsets.The SEU sensitivity of various resources is different.The IOB control bit and LUT elements are more sensitive, and more attention should be paid to the LUT elements in radiation hardening, which account for a quite large proportion of the configuration memory.
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