采用磁控溅射技术在钛合金和单晶硅上沉积ZrCuN薄膜,考查了正负脉冲偏压对薄膜微观结构和硬度、韧性的影响。采用场发射扫描电镜观察截面形貌,X射线光电子能谱（XPS）分析元素结合状态,X射线衍射（XRD）分析物相结构。采用纳米压入仪进行加载、卸载试验,分析了薄膜弹塑性变形特性;采用压入法定量比较了薄膜的断裂韧性。结果表明：正偏压不影响薄膜结构,其效果在于提高沉积速率约20%,改变等离子体内电荷状态,从而改变了薄膜的成分。向ZrN中添加少量Cu,抑制了柱状晶,薄膜结构由T区向II区转变;ZrN薄膜中加入Cu后硬度并未降低,而韧性得到很大改善。Cu在薄膜中以2种形式存在：一是替换固溶到ZrN晶粒中;二是以单质Cu存在于晶界。%ZrCuN thin films are deposited onto TC6 and Si wafers by magnetron sputtering Zr and Cu target in an argonitrogen gas mixture.The morphology of films is investigated by FESEM,the microstructure is studied by XRD and XPS.The plastic deformation characteristic of thin films is analyzed from loading/unloading curves measured by nano-indentation method.The fracture toughness of films is determined from the length of＇radial cracks＇on the applied diamond indenter load 1.96 N.The experimental result shows： Positive bias does not affect the film structure,the effect is to improve the deposition rate by 20% and change the plasma charge state,thus changing the composition of the films.Adding a small amount of Cu into ZrN film restrains columnar crystals,the structure of thin films changes from model T to Ⅱ zone.The hardness is not reduced after Cu is added to the ZrN film,and toughness is significantly improved.Cu in the ZrN films exists in two forms： the first is the substitution of solid solution in Zr-Cu-N grains,and the second is the form of elemental Cu in the grain boundary.
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