采用射频共溅射方法将微晶锗纳米颗粒埋入SiO2介质中,然后在不同温度的氮气氛中进行热处理.用拉曼光谱、变温电导特性测试等实验分析手段进行特性研究.结果表明,埋入SiO2介质中的微晶锗的平均尺寸随热处理的条件变化而变化,复合薄膜的光致发光的强度和电导率与微晶锗的平均尺寸有关.当微晶锗的平均尺寸约3 nm时,复合薄膜的电导率最大,光致发光的强度在2.175 ev和2.246 ev峰位处得到加强.%Ge microcrystals embedded in SiO2 glassy matrices were fabricated by a radio frequency cosputtering technique,and then annealed at several temperatures in N2 atmosphere for heat treatment,examined by means of Raman spectrometry,dependence of conductivity on temperatures and photoluminescence spectra.The experimental results show that an average size of microcrystals Ge embedded in SiO2 glassy matrices can be changed by heat treatment.The intensities of PL and the conductivities depend on the average size of Ge microcrystals.When the average size is about 3 nm,the conductivities have the largest values and the intensities of PL with peaks at 2.175 ev and 2.246 ev are enhanced.
展开▼
