宽禁带半导体ZnO具有高激子束缚能(60MeV)、低生长温度和低成本等诸多优势,是一种理想的紫外光电材料.作为光电器件的核心部分,薄膜质量是影响器件性能和表现的关键.因此,高质量ZnO薄膜的制备具有重要研究意义.相比于分子束外延和金属有机化学气相沉积等薄膜生长方法,磁控溅射技术具有明显的成本优势,并且适于大尺寸薄膜的生长,是薄膜生长工业中利用率最高的一种技术手段.采用新型共溅射磁控溅射系统,以离轴倾角溅射方式在硅基片上沉积一系列ZnO薄膜,探究了溅射功率和生长气氛等主要工艺参数对ZnO薄膜的形貌、结构和发光等物性的影响.%Wide band-gap semiconductor ZnO is regarded as an ideal material for ultraviolet optoelectronic devices,due to its high exciton binding energy of 60meV,low growth temperature and low cost,etc. The film quality usually plays an important role in optoelectronic devices,since it directly affects the device performance. Therefore,the study of pre-paring high quality ZnO film is of great significance. Comparing with other physical methods of film growth such as molecular beam epitaxy and metal organic chemical vapor deposition, magnetron sputtering offers an obvious advantage of low cost. It could be used to prepare large size films,and is one of the mostly employed techniques in the film in-dustry. In this work,a series of ZnO films are grown on Si substrates by a novel off-axis inclined sputtering method. The influence of sputtering power and growth ambience on the properties of ZnO films are investigated systematically.
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