Anisotropic elastic-plastic constitutive relation was used in this paper for establishing a three-dimensional model about nanoindentation process on monocrystal silicon by the non-linear finite element software MSC.Marc. The nanoindentation simulations were performed using Berkovich,Vicker,conical and spherical indenters on monocrystal sili-con (100) plane to study the response chatacteristics of the monocrystal silicon for different indenter geometries,differ-ent half-angle of conical indenters and different maximal loads during loading and unloading.The results show that, for the same indentation depth,the applied load was the lowest in the case with conical indenter,the stress and strain dis-tributions of conical and spherical indentation presented anisotropic that reflected the material properties of monocrystal silicon are disparate in different crystal orientation. For a given maximal indent loads of 25mN, the Vickers indenter generated a indentation depth of 300nm in the simulation which was close to the corresponding experiment result.%本文采用各向异性弹塑性材料本构关系，利用非线性有限元软件MSC.Marc建立了单晶硅纳米压痕过程的三维模型，分别用玻氏、维氏、圆锥形和球形压头对单晶硅（100）晶面进行了纳米压痕过程的仿真分析，研究了单晶硅对于不同形状的压头、不同压头半锥角、不同最大加载力的加、卸载响应特性。仿真结果表明，压入相同深度时，圆锥形压头所需载荷最小，材料对圆锥形和球形压入产生的应力应变分布呈现出各向异性，体现了单晶硅在不同晶向上的材料性能存在差异。当最大加载力为25mN时，仿真得出维氏压头在单晶硅（100）晶面产生的压痕深度约为300nm，与相应实验结果基本相符。
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