ZnSe,a Ⅱ-Ⅵ semiconductor material with a wide bandgap,has potential in optoelectronic devices. ZnSe thin films were deposited and doped by a magnetron RF sputtering systemunder which ZnSe:N samples were prepared under N 2 ambient and ZnSe alloy and Al targets were sputtered simultaneously to obtain ZnSe:Al.The compositional,structural,optical and electrical properties of films were studied in this paper.The results showed that the films with the wurtzite structure or cubic phase can be prepared at different temperatures,and that the opti-cal absorption edge changed with doping of ZnSe films,as a result of which N-type and p-type thin films were ob-tained while an obvious deviation from Arrhenius formula was observed in the conductivity and temperature meas-urements.It is therefore demonstrated that the impurity has affected the optoelectronic properties of ZnSe thin films.%ZnSe 是一种宽禁带的Ⅱ-Ⅵ族半导体材料，适宜作为光电器件的功能层。通过磁控溅射方法制备了 ZnSe薄膜并进行了掺杂改性。在溅射气体中通入 N 2的条件下制备了 ZnSe 掺 N 薄膜；采用共溅射法制备了 ZnSe 掺 Al薄膜。对制备的薄膜进行了成分、结构、光学和电学性质表征。发现在不同沉积温度下可分别得到六方相和立方相 ZnSe；掺杂后的薄膜光学吸收边发生变化，得到了 N 型和 P 型导电的薄膜，掺杂薄膜的暗态电导率随温度的变化偏离了 Arrhenius 关系，表明杂质的引入影响了 ZnSe 的电学性质。
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