Silicon-on-insulator (SOI) is well known as "new technology of Si semiconductor IC process in 21 Contrary". Recently, SOI materials have been identified as the first choice of the semiconductor materials for fabricating low voltage and low power circuits. In order to improve the working performance of the SOI circuit under the radiating circumstance, ion implantation of fluorine impurity into the insulator layers in SOI materials is used for hardening the thermal gate oxide layer. Proper implantation depth of fluorine would further improve radiate resistance performance of the SOI circuit. This paper describes the SIMS analysis results of fluorine impurity implantation profile at the interface between top silicon layer and oxide insulator layer.
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