采用溅射氧化耦合法(SOC),在Al2O3 (001)基底上成功制备了纳米尺度的W掺杂VO2薄膜.运用扫描电子显微镜(SEM)和光电子能谱仪(XPS)分别对薄膜的微观结构以及组分进行了分析；采用四探针测试仪测试了薄膜在不同温度下的方块电阻,从而确定了VO2和W掺杂VO2纳米薄膜的相变温度从341 K下降到314 K；最后利用紫外至红外光谱仪测试了薄膜在常温和高温下的透过率,并通过Film Wizard软件对薄膜的透过率进行拟合,获得了薄膜的光学折射率(n)和消光系数(k)随光电子能量(E)变化的关系曲线.研究结果表明,随着W掺杂量的增加,W掺杂VO2纳米薄膜的半导体-金属相变温度逐渐下降,其光学折射率(n)和消光系数(k)相比VO2薄膜也发生有规律的变化.%W-doped VO2 nano thin films have been fabricated successfully by sputtering oxidation coupling (SOC) method on sapphire substrate (c-plane). Scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS) were employed to analyze morphologies and components of thin films respectively. The four-probe instrument was applied to test sheet resistance of all samples, the phase transformation temperatures of VO2 and W-doped VO2 nano thin films were decreased from 341 K to 314 K. The optical transmittance of thin films were analyzed via UV/VIS spectrometer. The curves of the refractive index in) and extinction coefficient (κ) versus photon-energy (E) were achieved by applying Film Wizard software to fit optical transmittance. Results showed that the phase transformation temperature were gradually reduced with the increasing of tungsten components in the thin films. The refractive index (re) and extinction coefficient (κ) of W-doped VO2 nano thin films have changed regularly in comparison with VO2 nano thin films.
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