利用脉冲激光沉积( PLD)技术及水热法分别在p-GaAs外延片上生长了ZnO薄膜和纳米棒。 XRD及SEM测试结果表明,在GaAs衬底上生长的纤锌矿ZnO薄膜沿c轴方向生长,而ZnO纳米棒表现出多晶结构。室温下ZnO薄膜/p-GaAs的光致发光谱由一个近紫外发光峰(380 nm)、一条中心波长位于550 nm的可见发光带以及一个近红外发光峰(910 nm)组成,分别对应于ZnO的近带边发射、与ZnO缺陷相关的深能级发射以及p-GaAs中Be受主能级相关的辐射复合。由于ZnO纳米棒膜层较厚且取向性差,ZnO纳米棒/p-GaAs的光致发光谱中没有观察到明显的GaAs发光峰。%ZnO films and nanorods were deposited on the p-GaAs epitaxial wafer by pulse laser deposition tech-nology and hydrothermal method. The results of XRD and SEM test indicate that the wurtzite ZnO films on the surface of GaAs have good c-axis orientation, but the structure of the ZnO nanorods are polycrystalline. The room temperature( RT) photoluminescence spectrum of ZnO films/p-GaAs contains a near ultraviolet emission peak(380 nm) and a wide luminescence band in visible region centered at 550 nm,which are corresponding to the near-band-edge emission and defects related deep-level emission of ZnO. Besides, the near infrared emission centered at 910nm is attributed to the Be acceptor states of p-GaAs. Due to the complexity of structure and thicker layer of ZnO nanorods,there is no obvious photoluminescence peak of GaAs in the spectrum of ZnO nanorods/p-GaAs.
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