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首页> 外文期刊>Thin Solid Films >Structural and photoluminescence properties of ZnO nanorods grown on ion-plated Ga-doped ZnO seed layers by chemical bath deposition and fabrication of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)/ZnO nanorods heterostructures
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Structural and photoluminescence properties of ZnO nanorods grown on ion-plated Ga-doped ZnO seed layers by chemical bath deposition and fabrication of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)/ZnO nanorods heterostructures

机译：离子镀Ga掺杂的ZnO种子层上通过化学浴沉积和制备的聚（3,4-乙撑二氧噻吩）聚（苯乙烯磺酸盐）/ ZnO纳米棒异质结构生长的ZnO纳米棒的结构和光致发光特性

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Vertically aligned zinc oxide (ZnO) nanorods (NRs) were grown on the ion-plated Ga-doped ZnO (GZO) seed layers by chemical bath deposition from the mixed aqueous solutions of zinc nitrate hexahydrate and hexamethylenetetramine using the deionized water with a low resistivity or that with a high resistivity. The difference in the resistivity of the deionized water resulted in the differences in both the growth rates along the length- and width-directions and the different growth time dependences of the morphological, residual stress and photoluminescence properties of the NRs. The dark current-voltage curves of poly(3,4-ethylenedioxythiophene)poly (styrenesulfonate) (PEDOT: PSS)/ZnO NRs/GZO heterostructures showed rectifying characteristics, suggesting the formation of Schottky junctions. It was found that the barrier height of the Schottky junction decreases with the increase in the growth time of the ZnO NRs layer. Moreover, the PEDOT:PSS/ZnO NRs/GZO heterostructures exhibited the photocurrent, which is effectively generated under the illumination of 360 nm UV light. The rise and decay times of the photocurrent were typically several seconds and several hundreds seconds, respectively. The observed photoconductive mechanism cannot be explained without the help of the change in the Schottky barrier height due to the adsorption and desorption of the oxygen molecules at the surface of the NRs.
机译：使用低电阻率的去离子水，通过化学浴从六水合硝酸锌和六亚甲基四胺的混合水溶液中进行化学浴沉积，在离子镀Ga掺杂的ZnO（GZO）晶种层上生长垂直排列的氧化锌（ZnO）纳米棒（NRs）。或具有高电阻率的电阻。去离子水的电阻率差异导致沿长度方向和宽度方向的生长速率不同，以及NRs的形态，残余应力和光致发光特性的生长时间依赖性不同。聚（3,4-乙撑二氧噻吩）聚（苯乙烯磺酸盐）（PEDOT：PSS）/ ZnO NRs / GZO异质结构的暗电流-电压曲线显示出整流特性，表明形成了肖特基结。发现随着ZnO NRs层的生长时间的增加，肖特基结的势垒高度减小。此外，PEDOT：PSS / ZnO NRs / GZO异质结构表现出光电流，该光电流是在360 nm紫外线照射下有效产生的。光电流的上升和衰减时间通常分别为几秒和几百秒。由于NRs表面上氧分子的吸附和解吸，如果没有肖特基势垒高度的改变，就无法解释所观察到的光电导机理。

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