CdSe thin films were fabricated on ITO glass substrate and TiO2 nanotube arrays by electrochemical method in a three-electrode system in electrolyte containing SeO2, CdCl2 o 5/2H2O and H2SO4 at room temperature. The crystalline structure and morphology of the composite films prepared under different deposited potentials ( - 0.6,-0. 7,-0.8,-0. 9V, vs SCE) were investigated, and the optical properties of the composite films were measured. The results show that the prepared CdSe nanoparticles are agglomerated inhomogeneously. The optical absorption and photoelectric current of composite films are enhanced with the deposited potential increasing. The film deposited under - 0. 8V exhibits the maximum photoelectric current, but it is easy to peel from the substrate. According to the fastness and photocurrent response of the composite film, the suitable deposition voltage is around -0. 7V for obtaining the optimum film.%以SeO2·CdCl2·5/2H2O,H2SO4为原料,采用三电极体系,分别在ITO玻璃和TiO2纳米管阵列基底上沉积CdSe薄膜.研究了不同沉积电压(-0.6,-0.7,-0.8,-0.9V,均相对于SCE)下制备的复合薄膜的晶体结构和微观形貌,并测试了其光电性能.结果表明:制备出的纳米粒子呈不均匀团聚状态；随沉积电压的增大,光吸收增强,光响应电流增大,在沉积电压为-0.8V时复合薄膜的光响应电流达到最大值,但此沉积电压下的薄膜容易剥落.综合考虑薄膜质量和光响应电流,沉积电压为-0.7V时制备的复合薄膜最佳.
展开▼
