研究了室温注氘纯钒在电子辐照下位错环的变化.纯钒室温注氘后分别在500,550℃通过超高压透射电子显微镜(HVEM)观察分析了在电子辐照下的微观结构变化.结果表明:500℃电子辐照时,位错环没有明显的变化；在550℃时效后形成的位错环尺寸比500℃略有增加,在550℃继续进行电子辐照,位错环在尺寸和密度上同样没有变化.与纯铁相比,纯钒中的缺陷团簇在辐照下的稳定性更高.%The evolution of dislocation loops in deuterium-ion implanted pure vanadium under electron irradiation was investigated. Pure vanadium implanted by deuterium ions at room temperature was irradiated by electrons using High Voltage Electron Microscope (HVEM) at 500℃ and 550℃, respectively. Under electron irradiation at 500℃ the dislocation loops remained essentially the same size. The size of dislocation loops formed by aging at 550°C was a little larger than that formed by aging at 500℃. However, the dislocation loops also showed no change under electron irradiation at 550℃. Vanadium has greater stability of defect clusters under irradiation than iron.
展开▼
