This paper deals with the Monte Carlo Simulation of the transport of high energy ions in materials, The incident high energy ions interact with the target material in a way is approximate to the two unrelated mechanisms, nuclear scattering and electronic process. The energy loss of incident ions due to nuclear scattering is calculated using binary collision approximation.The impact parameter is sampled and scattering angle can be derived. The electronic energy loss of incident ions for the high energy is calculated by Bethe-Bloch formulation. Lindhard-Scharff formulation is used for low energy and the interpolation formulation is used for the medium energy region. Finally, the computer simulation of high energy irons transport in aluminum and silicon is made, and the results are presented and analyzed.%利用蒙特卡罗方法对高能离子在材料中的输运进行了计算机模拟研究，入射高能离子与靶材料的作用近似为核散射和电子作用两个独立的部分，核散射能量损失采用经典两体碰撞近似，通过对碰撞参数的随机抽样得到散射角，电子能量损失高能时采用Bethe-Bloch公式，低能时采用Lindhard-Scharff公式，中能时采用插值公式。最后对高能铁离子入射于铝、硅材料的输运进行了模拟计算，给出了模拟结果并进行了分析。
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