Sol-gel Preparation BZT ferroelectric thin films. The structure and surface morphology of BZT thin films were in-vestigated by X-ray diffraction and scanning electron microscopy,the annealing process of films were investigated by TG-DTA.The electrical properties of the film was mensured:The film dielectric constant of about 620 without bias,the dielectric loss and tenabiLi-ty of the film were 0.0335 and 48.63%.%Sol-gel法制备BZT铁电薄膜,用X射线衍射仪(BSX3200)和扫描电子显微镜研究了BZT的结构和表面形貌,用差热-热失重(TG-DTA)析谱分析BZT粉体的退火工艺.测定了薄膜的电性能:薄膜不加偏压下的介电常数大约为620左右,介电损耗和调谐量分别为0.0335和48.63%.
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