In this paper, the charge-controlled and flux-controlled memristor mathematical models are derived detailedly. The continuously variable conductance and memory properties of memristors are researched. An implementation scheme for analog memory using pulse controlled memristors is proposed, and its effectiveness is verified through theoretical analysis and simulation experiments. With crossbar array structure, the scheme is expected to achieve large-scale analog storage arrays, which may greatly promote the development of artificial neural networks and analog computers.%推导了忆阻器的电荷控制和磁通量控制数学模型,在该基础上研究了其电导状态连续可变的性质和记忆功能.提出了用脉冲控制忆阻器实现模拟信息存储的方案,通过理论分析、实验仿真验证了方案的有效性.结合交叉阵列结构,该方案有望实现大规模模拟存储阵列,推进人工神经网络和模拟式计算机的发展.
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