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Two-parameter multi-state memory device based on memristance and memcapacitance characteristics

机译：基于忆阻和忆阻特性的二参数多状态存储器件

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摘要

A device with an Al/copolymer/indium tin oxide structure is fabricated using a copolymer with a donor and acceptor structure. The memcapacitance characteristic corresponding to the single resistance state is found, and two-parameter storage is achieved. The device exhibits six capacitance states in three resistance states and excellent memory switching characteristics, including a low ON/OFF voltage, long retention time, and write-once-read-many-times and write-read-erase-read ability. The writing and reading of the capacitance and resistance states can be achieved by designing the appropriate voltage signal. These results provide a new approach for improving the storage density and information encryption. (C) 2018 The Japan Society of Applied Physics
机译：使用具有施主和受主结构的共聚物来制造具有Al /共聚物/铟锡氧化物结构的器件。找到对应于单电阻状态的介电容特性，并实现了两参数存储。该器件在三种电阻状态下表现出六个电容状态，并具有出色的存储器开关特性，包括低的开/关电压，长的保留时间以及一次写入多次读取和写入读取擦除读取的能力。可以通过设计适当的电压信号来实现电容和电阻状态的写入和读取。这些结果为提高存储密度和信息加密提供了一种新方法。 （C）2018日本应用物理学会

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  • 来源
    《Applied physics express》 |2018年第11期|114103.1-114103.4|共4页
  • 作者

    Liu Ruxin; Dong Ruixin; Yan Xunling; Yuan Shuai; Zhang Dong; Yang Bing; Xiao Xia;

  • 作者单位

    Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Key Lab Opt Commun Sci & Technol, Liaocheng 252059, Peoples R China;

    Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Key Lab Opt Commun Sci & Technol, Liaocheng 252059, Peoples R China;

    Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Key Lab Opt Commun Sci & Technol, Liaocheng 252059, Peoples R China;

    Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Key Lab Opt Commun Sci & Technol, Liaocheng 252059, Peoples R China;

    Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Key Lab Opt Commun Sci & Technol, Liaocheng 252059, Peoples R China;

    Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Key Lab Opt Commun Sci & Technol, Liaocheng 252059, Peoples R China;

    Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Key Lab Opt Commun Sci & Technol, Liaocheng 252059, Peoples R China;

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