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A monolithic InP/SOI platform for integrated photonics

         

摘要

The deployment of photonic integrated circuits(PICs)necessitates an integration platform that is scalable,high-throughput,cost-effective,and power-efficient.Here we present a monolithic InP on SOI platform to synergize the advantages of two mainstream photonic integration platforms:Si photonics and InP photonics.This monolithic InP/SOI platform is realized through the selective growth of both InP sub-micron wires and large dimension InP membranes on industry-standard(001)-oriented silicon-on-insulator(SOI)wafers.The epitaxial InP is in-plane,dislocation-free,site-controlled,intimately positioned with the Si device layer,and placed right on top of the buried oxide layer to form“InP-on-insulator”.These attributes allow for the realization of various photonic functionalities using the epitaxial InP,with efficient light interfacing between the III-V devices and the Si-based waveguides.We exemplify the potential of this InP/SOI platform for integrated photonics through the demonstration of lasers with different cavity designs including subwavelength wires,square cavities,and micro-disks.Our results here mark a critical step forward towards fully-integrated Si-based PICs.

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