以 MgO∶Ga2O3∶ZnO(2%∶2%∶96%,质量分数)陶瓷靶作为溅射源,采用磁控溅射技术在石英玻璃衬底上制备了镁镓共掺氧化锌(MGZO)透明半导体薄膜.采用 XRD、SEM、霍尔效应仪和分光光度计对 MGZO 薄膜进行测试表征,研究了溅射压强对 MGZO 薄膜晶体结构、电学性质和光学性能的影响.结果表明:所有 MGZO 薄膜均为六角纤锌矿结构并具有(002)择优取向生长特性,溅射压强对薄膜晶体结构和光电性能有明显影响,但几乎不影响其直接光学能隙(3.41～3.44 eV).当溅射压强为3.5 Pa时,MGZO 薄膜的结晶质量最好、张应力最小(8.29×10－2GPa)、电阻率最低(1.62×10－3Ω·cm)、可见光区平均透过率最高(87.8%)、品质因数最大(4.76×103Ω－1·cm－1),具有最好的光电综合性能.%Magnesium and gallium co-doped zinc oxide (MGZO)thin films were deposited onto quartz glass substrates by magnetron sputtering technique using a sintered ceramic target of MgO∶Ga2O3∶ZnO (2wt%∶2wt%∶96wt%).The effects of sputte-ring pressure on structural,electrical and optical properties of the deposited films were investigated by XRD,SEM,spectrophotome-ter and Hall effect measurement system.The results showed that all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the (002)orientation.The sputtering pressure significantly affects the microstructure and optoe-lectronic characteristics,but hardly the optical bandgaps of the deposited films.The most favorable optoelectronic performance was observed in the MGZO thin film deposited at the sputtering pressure of 3.5 Pa,as it possesses the best crystal quality,the minimum tensile stress (8.29×10-2 GPa),the lowest electrical resistivity (1.62×10-3 Ω·cm),the highest average visible transmittance (87.8%)and the maximum figure of merit (4.76×103 Ω-1·cm-1).In addition,the optical bandgaps of the produced thin films were evaluated by extrapolation method and determined to be in the range of 3.41—3.44 eV which are hardly affected by the sputte-ring pressure.
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