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首页> 外文学位 >Wide bandgap magnesium zinc oxide semiconducting thin films and applications to solar/visible blind ultraviolet photodetectors.
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Wide bandgap magnesium zinc oxide semiconducting thin films and applications to solar/visible blind ultraviolet photodetectors.

机译：宽带隙镁氧化锌镁半导体薄膜及其在太阳能/可见光紫外紫外线探测器中的应用。

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摘要

Research on MgxZn1−xO (χ = 0∼1) represents long-lasting efforts of searching for suitable wide-bandgap semiconductors for ultraviolet optoelectronic applications. With a tunable direct bandgap of 3.27∼7.8 eV and excellent material properties, especially the large exciton binding energy (60 meV) that enables low-threshold stimulated emission, MgxZn1−xO is believed to be one of the most promising optoelectronic materials for semiconductor ultraviolet lasers and photodetectors. The objective of this dissertation is to provide an in-depth picture of this oxide semiconductor, and to explore its potential applications in the scope of ultraviolet optoelectronics.; Single crystal MgxZn1−xO thin films were epitaxially grown on sapphire and silicon using pulsed laser deposition techniques. Large-scale deposition of MgxZn1−xO polycrystalline films on glass and polymer was also realized. The overall MgxZn 1−xO film quality improved significantly with the new target-making procedure and the optimized laser ablation conditions. By using combinatorial techniques, MgxZn1−xO thin films with continuously varying composition from ZnO to MgO were epitaxially grown on a single substrate. Characterizations of MgxZn1-xO composition spreads reveal a panoramic picture of the structural, electrical, and optical properties of MgxZn1−xO alloys and their evolution with film composition. Phase separation, bandgap discontinuity, solid solubility, and other application-related issues are discussed.; In view of the p-type doping challenge that impedes p-n junction based MgxZn1−xO devices, the optoelectronic applications of MgxZn1−xO thin films are focused on ultraviolet photodetectors with a metal-semiconductor-metal structure. Solar or visible-blind MgxZn1−xO photodetectors with high degree of visible rejection were fabricated on sapphire, glass, and silicon substrates. Large responsivity and moderate detection speed, which enable these MgxZn1−xO photodetectors to have a variety of practical applications, were realized. The mechanisms of photodetector internal gain and the relationship of carrier lifetime and photodetector response time are interpreted. Based on MgxZn1−xO composition spread thin films, wavelength-distinguishable ultraviolet photodetector arrays were also demonstrated. Each photodetector in the array has a unique composition-dependent photoresponse spectrum, which is consistent with the MgxZn 1−xO bandgap-composition relationship. The potential applications of using MgxZn1−xO photodetector arrays in ultraviolet spectral analyzing are also illustrated.
机译：Mg x Zn 1-x O（χ= 0〜1）的研究代表了为寻找适合紫外光电应用的宽带隙半导体而进行的长期努力。 Mg x Zn 1-x <具有3.27〜7.8 eV的可调直接带隙，并具有出色的材料性能，尤其是大的激子结合能（60 meV）可实现低阈值受激发射。 O被认为是用于半导体紫外线激光器和光电探测器的最有希望的光电材料之一。本文的目的是提供这种氧化物半导体的深入了解，并探讨其在紫外光电子学领域的潜在应用。利用脉冲激光沉积技术在蓝宝石和硅上外延生长Mg x Zn 1-x O单晶薄膜。还实现了Mg x Zn 1-x O多晶膜在玻璃和聚合物上的大规模沉积。通过新的靶标制作程序和优化的激光烧蚀条件，Mg x Zn 1-x O薄膜的整体质量得到了显着改善。通过组合技术，在单个衬底上外延生长具有从ZnO到MgO连续变化的组成的Mg x Zn 1-x O薄膜。 Mg x Zn 1-x O组成散布的特征揭示了Mg x Zn <的结构，电学和光学性质的全景图sub> 1-x O合金及其膜组成的演变。讨论了相分离，带隙不连续性，固溶性和其他与应用相关的问题。鉴于 p 型掺杂挑战会阻碍基于 pn 结的Mg x Zn 1-x O器件因此，Mg x Zn 1-x O薄膜的光电应用集中在具有金属-半导体-金属结构的紫外光电探测器上。在蓝宝石，玻璃和硅基板上制造了具有高可见抑制率的太阳或可见盲Mg x Zn 1-x O光电探测器。实现了大的响应度和适中的检测速度，使这些Mg x Zn 1-x O光电探测器具有多种实际应用。解释了光电探测器内部增益的机理以及载流子寿命与光电探测器响应时间之间的关系。基于Mg x Zn 1-x O组成的扩散薄膜，还展示了可波长区分的紫外光电探测器阵列。阵列中的每个光检测器具有唯一的依赖成分的光响应光谱，这与Mg x Zn 1-x O带隙-组成关系一致。还说明了使用Mg x Zn 1-x O光电探测器阵列在紫外光谱分析中的潜在应用。

著录项

  • 作者

    Yang, Wei.;

  • 作者单位

    University of Maryland College Park.;

  • 授予单位 University of Maryland College Park.;
  • 学科 Engineering Electronics and Electrical.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2002
  • 页码 260 p.
  • 总页数 260
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;工程材料学;
  • 关键词

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