以三甲基铝(TMA)和水为反应源,采用原子层沉积(ALD)技术在n型单晶硅表面沉积15 nm、30 nm和100 nm的Al2O3薄膜,并对样品进行快速退火(RTA)处理.采用少子寿命测试仪测试样品的有效少子寿命,获得了表面复合速率(SRV),通过X射线光电子能谱(XPS)分析了薄膜的化学成分,在此基础上研究了薄膜厚度及退火条件对钝化效果的影响,并分析了钝化机理.结果表明:ALD技术制备的Al2O3薄膜经退火后可使n型单晶硅SRV值降低到7 cm/s,表面钝化效果显著.%A12O3 thin films with the thickness of 15 ran, 30 nm and 100 nm were synthesized by thermal atomic layer deposition (ALD) using A1(CH3 )3 and H2O as sources. The surface passivation of n-type monocrystalline silicon was studied. After receiving rapid thermal annealing, the impact of film thickness and annealing conditions on the passivation performance was investigated. The passivation mechanism was analyzed through characterizing the effective minority carrier lifetime, surface recombination velocities and X-ray photoelectron spectroscopy (XPS). It is shown that a high level surface passivation was addressed by post-deposition annealed AI2O3 thin films with an effective surface recombination velocity of 7 cm/s.
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