采用射频磁控溅射技术在石英衬底上制备了掺杂浓度为0.5％(原子分数)的ZnO∶Sn(TZO)薄膜,研究了不同衬底温度下薄膜的结构、形貌、电学和光学的性能.研究发现,TZO薄膜沿着C轴择优生长,在400℃时结晶度最好,最低电阻率为2.619×10-2Ω·cm,在可见光范围内具有较好的透光率.%Tin doped zinc oxide(TZO) thin films were prepared by radio frequency magnetron sputtering on quartz glass substrates. The concentration of Sn element in the powder target was 0. 5% in atomic ratio. The effect of substrate temperature on the structural, surface morphologies, electrical and optical properties of the ZnO : Sn thin films was investigated. It was found that the as-deposited film is C-axis perpendicular to the substrate. The lowest re-sistivity(2. 619×10-2Ω? Cm), and the best crystal quality were obtained at 400℃. In the visible region, the films were with good transmittance.
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