A de-embedding method to get the on-die input and output impedance of RF-LDMOS by testing and software ADS is introduced in this paper. Its accuracy was validated by testing. Two kinds of common internal-matching circuits and their characteristics are introduced. An independently-developed RF-LDMOS internal-matching circuit with 45 mm grid width was achieved by means of ADS and HFSS. The common procedures of internal-matching circuit design,and the realization of MOS-capacitor and the bonding-wire simulation with HFSS are described. The testing result proves that the matching circuit can realize the intended functions. The stable input/output impedance was obtained inside the working band. The gain at 1 dB compression point reachs 16.5 dB. The power at 1 dB compression point reachs 48.9 dBm. The power density of grid width per millimeter reachs 1.7 W/mm.%介绍了通过测试及ADS软件去嵌入得到RF-LDMOS管芯阻抗的方法，并通过测试结果验证其准确性。介绍了两种常用的内匹配电路形式及其特点，并采用其中一种通过ADS和HFSS两款仿真软件实现一款自主研发的45 mm 栅宽RF-LDMOS内匹配电路，说明了内匹配电路设计的一般步骤以及MOS电容和键合线HFSS仿真实现。测试结果表明，该匹配电路实现了预期功能，在工作频带内得到了较为稳定的输入/输出阻抗，同时1 dB压缩点增益达到16.5 dB，功率达到48.9 dBm，器件每毫米栅宽功率密度达到1.7 W/mm。
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