The radiation effect of N-type GaP irradiated by 2.4×1015/cm2 and2.2×1016/cm2 85MeV 19F ions was investigated by positron annihilation lifetime technique. Monovacancies were created in the irradiated N-type GaP, and the concentration of produced monovacancies increases with the increasing of irradiation fluence.%用正电子湮没寿命技术研究了2.4×1015/cm2和2.2×1016/cm285MeV19F离子辐照GaP的辐照效应。结果表明，辐照在GaP中产生浓度较高的单空位，且随辐照剂量增大浓度增加。
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