用正电子湮没寿命技术研究了2.4×1015/cm2和2.2×1016/cm2 85MeV 19F离子辐照GaP的辐照损伤及其退火效应。结果表明，高低两种注量辐照在GaP中产生浓度较高的单空位。在300×1023K温度范围内测量了正电子湮没寿命随退火温度的变化。低注量辐照样品在退火过程中有双空位的形成；而高注量辐照样品中观察到比双空位更复杂的缺陷形式，其完全被退火的温度比低剂量辐照的高250K。%The radiation defects and damage in N-type GaP irradiated by 85MeV 19F ions at fluences of 2.4×1015/cm2 and 2.2×1016/cm2 as a function of annealing temperature from 300K to 1023K were investigated by positron annihilation lifetime technique. Monovacancies were created in the irradiated N-type GaP, and the concentration of monovacancies was proportional to the irradiation fluence. Defects more complicated than di-vacancies in the high fluence irradiated GaP and di-vacancies in low fluence irradiated GaP were observed during annealing process, respectively. The complete annealing temperature of the defects for low fluence irradiated GaP was 250K lower than that for high fluence irradiated GaP.
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