选择双列直插塑料封装的CMOS(Complementary Metal Oxide Semiconductor)器件CC4069六反相器作为研究对象,采用蒙特卡罗方法分析了器件吸收剂量与标称辐照剂量的差异,结合电离总剂量效应敏感参数阈电压的测量,分析评估了不满足次级电子平衡条件对器件敏感区吸收剂量和电离总剂量效应的影响程度,分析比较了标称辐照剂量和修正吸收剂量的PMOS(Positive channel Metal Oxide Semiconductor)和NMOS(Negative channel Metal Oxide Semiconductor)不同偏置下的阈电压漂移变化规律.结果表明:器件敏感层中的吸收剂量只有标称辐照剂量的83.52%.次级电子不平衡下的辐照试验会影响器件的抗辐射水平考核,器件的抗辐射水平被高估了16.5%.%[Background] Absorbed dose is the most important physical quantity in the study of radiation effect. In the total ionizing dose experiment of 60Co gamma ray, the secondary electron equilibrium condition is not satisfied in the sensitive area of a thinner device. The actual absorbed dose could be less than the irradiation dose measured by the same dosimeter. [Purpose] This study aims to analyze and evaluate the influence extent of secondary electron imbalance on the absorbed dose and total ionizing dose of the sensitive layer of the device. [Methods] By studying the total ionizing dose effect with 60Co γ-rays on complementary metal oxide semiconductor (CMOS) device"CC4069 inverters", the difference between the absorbed doses of the sensitive layer of CC4069 inverters and the nominal irradiation dose measured by the dosimeter was calculated by Monte Carlo simulation. Combined with the measurement of the threshold voltage of the irradiation sensitive parameter of CC4069 inverter, the relationship between the threshold voltage drift of positive channel metal oxide semiconductor (PMOS) and negative channel metal oxide semiconductor (NMOS) under different bias conditions and the nominal irradiation dose and absorbed dose corrected by Monte Carlo simulation were analyzed and compared. [Results] The results show that the absorbed dose of the device sensitive layer is only 83.52% of the nominal irradiation dose. [Conclusion] The radiation test under the condition of secondary electron non-equilibrium will affect the evaluation of radiation hardening of device, and the radiation hardening of the device is overestimated by 16.5%.
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